DIFFUSION OF POINT DEFECTS IN A STRESS GRADIENT

被引：5
|
作者：
WOLFER, WG
机构：
来源：
SCRIPTA METALLURGICA | 1971年 / 5卷 / 11期
关键词：
D O I：
10.1016/0036-9748(71)90148-7
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
引用
收藏
页码：1017 / &
相关论文
共 50 条
  • [31] The nature and diffusion of intrinsic point defects in SiC
    Bockstedte, M
    Heid, M
    Mattausch, A
    Pankratov, O
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 471 - 476
  • [32] Role of point defects on B diffusion in Ge
    Scapellato, G. G.
    Bruno, E.
    Priolo, F.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 15 (06) : 656 - 668
  • [33] Diffusion of interfacial point defects studied by BEEM
    Meyer, T.
    von Kanel, H.
    Applied Surface Science, 1998, 123-124 : 243 - 248
  • [34] Point defects and diffusion in thin films of GaAs
    Cohen, RM
    MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1997, 20 (4-5): : 167 - 280
  • [35] Modelling point defects and diffusion in earth materials
    Wright, K
    COMPUTATIONAL MATERIALS SCIENCE, 2003, 187 : 308 - 320
  • [36] Diffusion of hydrogen and intrinsic point defects in olivine
    Kohlstedt, DL
    Mackwell, SJ
    ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS, 1998, 207 : 147 - 162
  • [37] Diffusion of point defects in shocked molecular crystals
    Skryl, Y
    Kuklja, MM
    PHYSICAL REVIEW B, 2005, 71 (09):
  • [38] Diffusion of antimony in silicon in the presence of point defects
    Yu, Xiangkun
    Ma, K. B.
    Chen, Q. Y.
    Wang, Xuemei
    Liu, Jarui
    Chu, Wei-Kan
    Shao, Lin
    Thompson, Phillip E.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 261 (1-2): : 1146 - 1149
  • [39] Diffusion of interfacial point defects studied by BEEM
    Meyer, T
    von Kanel, H
    APPLIED SURFACE SCIENCE, 1998, 123 : 243 - 248
  • [40] The nature and diffusion of intrinsic point defects in SiC
    Bockstedte, Michel
    Heid, Matthias
    Mattausch, Alexander
    Pankratov, Oleg
    Materials Science Forum, 2002, 389-393 (01) : 471 - 476
12345