共 50 条
- [42] NATURE OF DEFECTS IN GALLIUM-ARSENIDE HEAVILY DOPED WITH TELLURIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (02): : 194 - &
- [43] Application of the bounds-analysis approach to arsenic and gallium antisite defects in gallium arsenide PHYSICAL REVIEW B, 2015, 91 (01):
- [44] DISTRIBUTION OF RADIATION DEFECTS IN PROTON-IRRADIATED GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (01): : 80 - &
- [45] OXYGEN DEFECTS IN GALLIUM-ARSENIDE AND THE CONSTANTS OF REACTIONS OF THEIR FORMATION IZVESTIYA SIBIRSKOGO OTDELENIYA AKADEMII NAUK SSSR SERIYA KHIMICHESKIKH NAUK, 1986, (05): : 29 - 31
- [46] Detection of vacancy defects in gallium arsenide by positron lifetime spectroscopy DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1995, 1996, 149 : 49 - 54
- [47] LASER ANNEALING OF POINT DEFECTS IN SILICON AND GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1980, 14 (03): : 251 - 252
- [49] INTERACTION OF DIFFUSING ZINC WITH VACANCIES IN GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (09): : 1544 - 1548
- [50] Chemical Interaction of Indium Arsenide and Gallium Antimonide with Sulfur Inorganic Materials, 2003, 39 : 215 - 219