CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF NB/ALOX-AL/NB JOSEPHSON-JUNCTIONS

被引：28
|
作者：
IMAMURA, T
HASUO, S
机构：
[1] Fujitsu Laboratories Ltd., Atsugi 243-01
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 06期
关键词：
D O I：
10.1063/1.104556
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A study of microstructure of Nb/AlO(x)-Al/Nb Josephson junctions by cross-sectional transmission electron microscopy yielded much information regarding the junction barrier region. Both thick Nb and several-nanometer Al form polycrystalline films with columnar structures. Nb is oriented to the (110) plane, and Al is (111). The 200 nm lower Nb has a wavy surface with approximately 5 nm smoothness, but its surface is planarized by several nanometers Al deposited on it. Thus AlO(x) with a smoothness under 1 nm can be formed on Al. The upper Nb has a good crystalline structure even just above the AlO(x) barrier.
引用
收藏
页码：645 / 647
页数：3
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