1.22-MU-MHGCDTE/CDTE AVALANCHE PHOTO-DIODES

被引:16
|
作者
SHIN, SH
PASKO, JG
LAW, HD
CHEUNG, DT
机构
关键词
D O I
10.1063/1.92969
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:965 / 967
页数:3
相关论文
共 50 条
  • [1] INGAASP AVALANCHE PHOTO-DIODES
    YEATS, R
    CHIAO, SH
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1844 - 1845
  • [2] IMPROVED GERMANIUM AVALANCHE PHOTO-DIODES
    MIKAMI, O
    ANDO, H
    KANBE, H
    MIKAWA, T
    KANEDA, T
    TOYAMA, Y
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (09) : 1002 - 1007
  • [3] AVALANCHE PHOTO-DIODES FOR LONG WAVELENGTHS
    TOMASETTA, LR
    LAW, HD
    NAKANO, K
    [J]. LASER FOCUS WITH FIBEROPTIC TECHNOLOGY, 1978, 14 (12): : 42 - &
  • [4] GERMANIUM AVALANCHE PHOTO-DIODES IN THE 1.3-MU-M WAVELENGTH REGION
    KAGAWA, S
    MIKAWA, T
    KANEDA, T
    [J]. FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1982, 18 (03): : 397 - 418
  • [5] INGAAS AVALANCHE PHOTO-DIODES FOR 1-MU-M WAVELENGTH REGION
    SHIRAI, T
    MIKAWA, T
    KANEDA, T
    MIYAUCHI, A
    [J]. ELECTRONICS LETTERS, 1983, 19 (14) : 534 - 535
  • [6] ABSOLUTE NOISE CHARACTERIZATION OF AVALANCHE PHOTO-DIODES
    BRAIN, MC
    [J]. ELECTRONICS LETTERS, 1978, 14 (15) : 485 - 487
  • [7] INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN
    NISHIDA, K
    TAGUCHI, K
    MATSUMOTO, Y
    [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 251 - 253
  • [8] A REVIEW OF AVALANCHE PHOTO-DIODES, TRENDS AND MARKETS
    MURRAY, LA
    WANG, K
    HESSE, K
    [J]. OPTICAL SPECTRA, 1980, 14 (04): : 54 - 59
  • [9] BACK-TO-BASICS WITH AVALANCHE PHOTO-DIODES
    CARR, DL
    SHAUNFIELD, WN
    [J]. ELECTRO-OPTICAL SYSTEMS DESIGN, 1979, 11 (07): : 46 - 50
  • [10] LEAKAGE CURRENT IN INGAASP AVALANCHE PHOTO-DIODES
    YEATS, R
    CHIAO, SH
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 167 - 170