共 50 条
- [1] INGAASP AVALANCHE PHOTO-DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1844 - 1845
- [2] IMPROVED GERMANIUM AVALANCHE PHOTO-DIODES [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (09) : 1002 - 1007
- [3] AVALANCHE PHOTO-DIODES FOR LONG WAVELENGTHS [J]. LASER FOCUS WITH FIBEROPTIC TECHNOLOGY, 1978, 14 (12): : 42 - &
- [4] GERMANIUM AVALANCHE PHOTO-DIODES IN THE 1.3-MU-M WAVELENGTH REGION [J]. FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1982, 18 (03): : 397 - 418
- [5] INGAAS AVALANCHE PHOTO-DIODES FOR 1-MU-M WAVELENGTH REGION [J]. ELECTRONICS LETTERS, 1983, 19 (14) : 534 - 535
- [6] ABSOLUTE NOISE CHARACTERIZATION OF AVALANCHE PHOTO-DIODES [J]. ELECTRONICS LETTERS, 1978, 14 (15) : 485 - 487
- [8] A REVIEW OF AVALANCHE PHOTO-DIODES, TRENDS AND MARKETS [J]. OPTICAL SPECTRA, 1980, 14 (04): : 54 - 59
- [9] BACK-TO-BASICS WITH AVALANCHE PHOTO-DIODES [J]. ELECTRO-OPTICAL SYSTEMS DESIGN, 1979, 11 (07): : 46 - 50
- [10] LEAKAGE CURRENT IN INGAASP AVALANCHE PHOTO-DIODES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 167 - 170