ABSOLUTE NOISE CHARACTERIZATION OF AVALANCHE PHOTO-DIODES

被引：8
|
作者：
BRAIN, MC
机构：
来源：
ELECTRONICS LETTERS | 1978年 / 14卷 / 15期
关键词：
D O I：
10.1049/el:19780326
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：485 / 487
页数：3
相关论文
共 50 条
  • [1] MULTIPLICATION NOISE OF INP AVALANCHE PHOTO-DIODES
    SHIRAI, T
    OSAKA, F
    YAMASAKI, S
    KANEDA, T
    SUSA, N
    [J]. APPLIED PHYSICS LETTERS, 1981, 39 (02) : 168 - 169
  • [2] MULTIPLICATION NOISE IN (111)INP AVALANCHE PHOTO-DIODES
    OSAKA, F
    KANEDA, T
    FUJITSU, KN
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1670 - 1671
  • [3] NOISE CHARACTERIZATION OF AVALANCHE PHOTO-DIODES WITH A MULTICHANNEL PULSE-HEIGHT ANALYZER
    SEIBT, W
    ELFSTEN, B
    [J]. PHYSICA SCRIPTA, 1981, 24 (02): : 375 - 377
  • [4] INGAASP AVALANCHE PHOTO-DIODES
    YEATS, R
    CHIAO, SH
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1844 - 1845
  • [5] MULTIPLICATION NOISE IN MULTI-HETEROSTRUCTURE AVALANCHE PHOTO-DIODES
    RAKSHIT, S
    CHAKRABORTI, NB
    SARIN, R
    [J]. SOLID-STATE ELECTRONICS, 1983, 26 (10) : 999 - 1003
  • [6] IMPROVED GERMANIUM AVALANCHE PHOTO-DIODES
    MIKAMI, O
    ANDO, H
    KANBE, H
    MIKAWA, T
    KANEDA, T
    TOYAMA, Y
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (09) : 1002 - 1007
  • [7] MULTIPLICATION NOISE IN PLANAR INP INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES
    SHIRAI, T
    YAMASAKI, S
    OSAKA, F
    NAKAJIMA, K
    KANEDA, T
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 532 - 533
  • [8] AVALANCHE PHOTO-DIODES FOR LONG WAVELENGTHS
    TOMASETTA, LR
    LAW, HD
    NAKANO, K
    [J]. LASER FOCUS WITH FIBEROPTIC TECHNOLOGY, 1978, 14 (12): : 42 - &
  • [9] TEMPERATURE-DEPENDENCE OF MULTIPLICATION NOISE IN SILICON AVALANCHE PHOTO-DIODES
    KANBE, H
    [J]. ELECTRONICS LETTERS, 1978, 14 (17) : 539 - 541
  • [10] VERY LOW-NOISE SILICON PLANAR AVALANCHE PHOTO-DIODES
    GOEDBLOED, JJ
    SMEETS, ETJM
    [J]. ELECTRONICS LETTERS, 1978, 14 (03) : 67 - 69
12345