MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON

被引：0
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作者：
KAISER, W
FRISCH, HL
REISS, H
机构：
来源：
PHYSICAL REVIEW LETTERS | 1958年 / 1卷 / 11期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：428 / 428
页数：1
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