ON THE DIFFERENCE IN DAMAGE DISTRIBUTIONS OF N+ SINGLE-ION AND N-2(+) MOLECULAR ION IRRADIATION OF SILICON AT HIGH-DOSES

被引：2
|
作者：
MULLER, M
FINK, D
机构：
[1] Hahn-Meitner-Institute Berlin, D-14109 Berlin
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1995年 / 133卷 / 04期
关键词：
NITROGEN; SILICON; ION IMPLANTATION; MOLECULAR IONS; NUCLEAR ENERGY TRANSFER; RES; CHANNELING; DAMAGE DISTRIBUTION; HIGH DOSE IMPLANTATION;
D O I：
10.1080/10420159508226269
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
The collisional damage profiles of high dose 0.7 MeV N+ and 1.3 MeV N-2(+) ions in Si crystals, as determined by RBS/channeling, have been compared with each other. The damage produced by molecular ions extends over a broader regime than the one stemming from single-atomic ions; The difference in width of the damage distributions amounts to as much as 30%. This is much more than the 6% difference reported earlier for ranges of single-atomic and molecular nitrogen ions in matter. [1] It supports recent findings of enhanced damage of carbon cluster ions in polymeric matter [2] and on 3D-damage distributions of N-2(+) ions in Si. [3].
引用
收藏
页码：259 / 266
页数：8
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