NON-LINEAR IMPURITY SCREENING IN SEMICONDUCTORS

被引：62

作者：

CORNOLTI, F ^{[1
]}

RESTA, R ^{[1
]}

机构：

[1] UNIV PISA, IST FIS, I-56100 PISA, ITALY

来源：

PHYSICAL REVIEW B | 1978年 / 17卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.17.3239

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3239 / 3242

页数：4

共 50 条

[1] VARIATIONAL APPROACH TO NON-LINEAR IMPURITY SCREENING IN SEMICONDUCTORS
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[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 317 - 317
[2] NON-LINEAR SUSCEPTIBILITY OF IMPURITY CENTERS IN SEMICONDUCTORS
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 116 (01): : 111 - 118
[3] ELECTRON-MOBILITY LIMITED BY IONIZED IMPURITY SCATTERING WITH NON-LINEAR SCREENING IN SEMICONDUCTORS
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[J]. PHYSICAL REVIEW B, 1981, 23 (04): : 1847 - 1850
[4] NON-LINEAR SPECTROSCOPY OF SHALLOW IMPURITY LEVELS IN SEMICONDUCTORS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (08): : 945 - 946
[5] RELEVANCE OF NON-LINEAR SCREENING IN COVALENT SEMICONDUCTORS
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[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (12) : 1297 - 1300
[6] SYNTHETIC NON-LINEAR SEMICONDUCTORS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (05) : 791 - 794
[7] CARRIER SCATTERING BY IONIZED IMPURITIES WITH NON-LINEAR SCREENING CHARGE IN SEMICONDUCTORS
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (01): : 165 - 168
[8] THEORY OF NON-LINEAR PHOTOELASTICITY OF SEMICONDUCTORS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (12): : 1422 - 1423
[9] DYNAMIC NON-LINEAR OPTICS IN SEMICONDUCTORS
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[J]. APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY, 1982, 28 (2-3): : 92 - 93
[10] NON-LINEAR QUANTUM TRANSPORT IN SEMICONDUCTORS
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 824 - 830

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