IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS

被引：170

|

作者：

THOMAS, CO

KAHNG, D

MANZ, RC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1962年 / 109卷 / 11期

关键词：

D O I：

10.1149/1.2425235

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1055 / 1061

页数：7

相关论文

共 50 条

[1] IMPURITY CONTROL AND DISTRIBUTION IN EPITAXIAL SILICON FILMS
KAHNG, D
MANZ, RC
ATALLA, MM
THOMAS, CO
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (08) : C177 - C177
[2] IMPURITY DISTRIBUTION OF SILICON EPITAXIAL FILM
SUZUKI, K
ENDO, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : C96 - &
[3] IMPURITY DISTRIBUTION IN EPITAXIAL FILMS AFTER OXIDATION
LORENZ, G
SCHEFFER, G
SOLID-STATE ELECTRONICS, 1967, 10 (01) : 73 - &
[4] MEASUREMENT OF IMPURITY DISTRIBUTION ALONG DEPTH OF SILICON EPITAXIAL LAYERS
BOITSOV, YP
PROKHORO.VI
MASHEKHI.VT
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1969, (05): : 1292 - &
[5] IMPURITY DISTRIBUTION IN EPITAXIAL LAYERS OF SILICON OBTAINED BY SILANE PYROLYSIS
GRANKOV, IV
GUREVICH, VM
IVANOV, LS
MOSKALEV, LL
INORGANIC MATERIALS, 1982, 18 (03) : 279 - 282
[6] DETERMINATION OF IMPURITY DISTRIBUTION IN SILICON EPITAXIAL FILM USING MOS CAPACITOR
NISHI, Y
KONAKA, M
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (11) : 1116 - &
[7] IMPURITY DISTRIBUTION IN EPITAXIAL GROWTH
GROVE, AS
RODER, A
SAH, CT
JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) : 802 - &
[8] IMPURITY EFFECTS IN EPITAXIAL LAYERS OF SILICON
NIELSEN, S
RICH, GJ
VACUUM, 1964, 14 (03) : 123 - &
[9] IMPURITY INTRODUCTION DURING EPITAXIAL GROWTH OF SILICON
GLANG, R
KIPPENHAN, BW
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 299 - 301
[10] IMPURITY REDISTRIBUTION PROCESSES IN EPITAXIAL SILICON LAYERS
JOYCE, BA
WEAVER, JC
MAULE, DJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (11) : 1100 - &

← 1 2 3 4 5 →