ELECTROLUMINESCENCES OF ZN-DIFFUSED GAP DIODES AND THEIR ELECTRICAL CHARACTERISTICS

被引:7
|
作者
MIYAUCHI, T
SONOMURA, H
YAMAMOTO, N
机构
关键词
D O I
10.1143/JJAP.8.711
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:711 / &
相关论文
共 50 条
  • [21] Structural characterisation of vapour Zn-diffused waveguides in lithium niobate
    Fedorov, VA
    Korkishko, YN
    Vereda, F
    Lifante, G
    Cusso, F
    JOURNAL OF CRYSTAL GROWTH, 1998, 194 (01) : 94 - 100
  • [22] Optical properties of Cd- and Zn-diffused layers in InP
    Si, SK
    Kim, SJ
    Moon, Y
    Yoon, E
    Yoo, JB
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 32 (02) : 162 - 165
  • [23] Optical characterization of vapor Zn-diffused waveguides in lithium niobate
    Schiller, F
    Herreros, B
    Lifante, G
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1997, 14 (02): : 425 - 429
  • [24] Characterization of index profiles of Zn-diffused LiNbO3 waveguides
    Nevado, R
    Lifante, G
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1999, 16 (10): : 2574 - 2580
  • [25] DISTRIBUTION OF RADIATIVE RECOMBINATION EFFICIENCY IN Zn-DIFFUSED GaAs LAYERS.
    Darek, Bogdan
    Gawronska, Ewa
    Szymanski, Leszek
    Electron Technology (Warsaw), 1978, 11 (03): : 63 - 72
  • [26] EFFECTS OF RAPID QUENCHING ON THE IMPURITY SITE LOCATION IN ZN-DIFFUSED INP
    YU, KM
    WALUKIEWICZ, W
    CHAN, LY
    LEON, R
    HALLER, EE
    JAKLEVIC, JM
    HANSON, CM
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) : 86 - 90
  • [27] Characterization of CdTe, Cd0.96Zn0.04 and Zn-diffused CdTe by defect etching
    Clark, JC
    Jones, ED
    Capper, P
    Mullin, JB
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1998, 9 (05) : 397 - 401
  • [28] GAAS/(GAAL)AS DEEP ZN-DIFFUSED CHANNELED-SUBSTRATE LASER
    CHOI, HK
    WANG, S
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3600 - 3602
  • [29] ZN-DIFFUSED IN0.53GA0.47AS-INP AVALANCHE PHOTODETECTOR
    MATSUSHIMA, Y
    SAKAI, K
    AKIBA, S
    YAMAMOTO, T
    APPLIED PHYSICS LETTERS, 1979, 35 (06) : 466 - 468
  • [30] SINUSOIDAL MODULATION CHARACTERISTICS OF ZN-DIFFUSED (GAAL)AS DOUBLE-HETEROSTRUCTURE WINDOW LASERS OF VARYING DIFFUSION DEPTHS
    BOURKOFF, E
    KERPS, D
    ENGELMANN, RWH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2180 - 2180