LATTICE DISORDER INVESTIGATION OF SIMOX FILM BY MULTICRYSTAL X-RAY-DIFFRACTOMETRY

被引：3

作者：

NIKULIN, AY ^{[1
]}

SNIGIREV, AA ^{[1
]}

STARKOV, VV ^{[1
]}

HEMMENT, PLE ^{[1
]}

VYATKIN, AF ^{[1
]}

机构：

[1] UNIV SURREY,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 13卷 / 04期

关键词：

D O I：

10.1016/0921-5107(92)90129-W

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Multi-crystal X-ray diffraction has been used to study the strain located close to the Si-SiO2 interface of device grade SIMOX substrates. It is found that the strain is located within a layer whose thickness is about 15% of the silicon overlayer. The quality of this layer can be restored by annealing at 1000-degrees-C.

引用

页码：287 / 290

页数：4

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