HIGH QUANTUM EFFICIENCY PHOTOLUMINESCENCE FROM LOCALIZED EXCITONS IN SI1-XGEX

被引：74
|
作者：
LENCHYSHYN, LC
THEWALT, MLW
STURM, JC
SCHWARTZ, PV
PRINZ, EJ
ROWELL, NL
NOEL, JP
HOUGHTON, DC
机构：
[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544
[2] NATL RES COUNCIL CANADA,OTTAWA K1A 0R6,ONTARIO,CANADA
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 25期
关键词：
D O I：
10.1063/1.106733
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a new photoluminescence process in epitaxial Si1-xGex, layers grown on Si by rapid thermal chemical vapor deposition which we attribute to the recombination of excitons localized at random alloy fluctuations. This luminescence is characterized by saturation at very low excitation densities (congruent-to 100-mu-W cm-2), very long decay times (> 1 ms), and high quantum efficiency at low excitation. We have directly measured an external photoluminescence quantum efficiency of 11.5+/-2%.
引用
收藏
页码：3174 / 3176
页数：3
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