MAGNETIC SUSCEPTIBILITY OF CDXHG1-XTE

被引：7
|
作者：
IVANOVOM.VI [1 ]
KOLOMIET.BT [1 ]
OGORODNI.VK [1 ]
SMEKALOV.KP [1 ]
TSMOTS, VM [1 ]
机构：
[1] AF IOFFE PHYSICO TECH INST,LENINGRAD,USSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 14卷 / 01期
关键词：
D O I：
10.1002/pssa.2210140104
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：51 / 58
页数：8
相关论文
共 50 条
  • [31] STRUCTURE AND PROPERTIES OF CDXHG1-XTE FILMS
    COHENSOLAL, G
    SELLA, C
    IMHOFF, D
    ZOZIME, A
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 517 - 520
  • [32] THE MECHANICAL-PROPERTIES OF CDXHG1-XTE
    COLE, S
    WILLOUGHBY, AFW
    BROWN, M
    JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 370 - 374
  • [33] DIFFUSION OF ARSENIC IN EPITAXIAL CDXHG1-XTE
    FALCONER, JE
    PALFREY, HD
    BLACKMORE, GW
    JOURNAL OF CRYSTAL GROWTH, 1990, 100 (1-2) : 275 - 278
  • [34] CDXHG1-XTE FILMS BY CATHODIC SPUTTERING
    KRAUS, H
    PARKER, SG
    SMITH, JP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (06) : 616 - &
  • [35] Study of the electrical properties of CdxHg1-xTe
    Biryulin, PV
    Kosheleva, VI
    Turinov, VI
    SEMICONDUCTORS, 2004, 38 (07) : 751 - 757
  • [36] TUNNELLING SPECTROSCOPY OF CDXHG1-XTE DETECTORS
    PLACZEKPOPKO, E
    PAWLIKOWSKI, JM
    JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 485 - 489
  • [37] NEUTRON-IRRADIATION OF CDXHG1-XTE
    IVANOVOMSKII, VI
    KUTEKHOV, NV
    SMIRNOV, VA
    YULDASHEV, SU
    GADAEV, OA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (03): : 238 - 242
  • [38] PHOTOEXCITATION OF SHALLOW ACCEPTORS IN CDXHG1-XTE
    TSYPISHKA, DI
    IVANOVOMSKII, VI
    GEORGITSE, EI
    GUTSULYAK, LM
    MIRONOV, KE
    SEMICONDUCTORS, 1993, 27 (04) : 394 - 395
  • [39] Photoelectromagnetic detector on the basis of CdxHg1-xTe
    Gaziyev, FN
    Huseynov, EK
    SOLID-STATE ELECTRONICS, 2004, 48 (09) : 1679 - 1681
  • [40] MAGNETIC-FIELD-INDUCED MOTT TRANSITION IN CDXHG1-XTE
    ALEINIKOV, AB
    BARANSKII, PI
    ZHIDKOV, AV
    JETP LETTERS, 1982, 35 (11) : 574 - 576
12345