LOW-TEMPERATURE RADIATION RESPONSE OF A12O3 GATE INSULATORS

被引:5
|
作者
BOESCH, HE
机构
关键词
D O I
10.1109/TNS.1977.4329179
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2135 / 2139
页数:5
相关论文
共 50 条
  • [21] HOLE TRANSPORT IN SIO2 AND REOXIDIZED NITRIDED SIO2 GATE INSULATORS AT LOW-TEMPERATURE
    BOESCH, HE
    DUNN, GJ
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) : 1083 - 1088
  • [22] INITIAL PERMEABILITY PEAK IN GD3FE5O12 AT LOW-TEMPERATURE
    PASCARD, H
    GLOBUS, A
    IEEE TRANSACTIONS ON MAGNETICS, 1986, 22 (05) : 650 - 652
  • [23] Low-temperature investigations of the open-framework material HfMgMo3O12
    Miller, Kimberly J.
    Johnson, Michel B.
    White, Mary Anne
    Marinkovic, Bojan A.
    SOLID STATE COMMUNICATIONS, 2012, 152 (18) : 1748 - 1752
  • [24] Low-temperature sintering of ceramics for the production of low-voltage insulators
    Medvedovski, E.
    InterCeram: International Ceramic Review, 1996, 45 (02):
  • [25] THE REMOVAL OF NO BY LOW-TEMPERATURE O-3 OXIDATION
    PURI, IK
    COMBUSTION AND FLAME, 1995, 102 (04) : 512 - 518
  • [26] Removal of NO by low-temperature O3 oxidation
    Puri, Ishwar K.
    Combustion and Flame, 1995, 102 (04):
  • [27] Effect on crack healing behavior of A12O3/SiC nanocomposites under different annealing temperature
    Zhai, Hua-Zhang
    Li, Jian-Bao
    Huang, Xiang-Dong
    Dai, Jin-Hui
    Zhang, Shu-Xia
    Cailiao Gongcheng/Journal of Materials Engineering, 2002, (10): : 3 - 6
  • [28] CHARACTERIZATION OF FREEZE-DRIED A12O3 AND FE2O3
    JOHNSON, DW
    SCHNETTLER, FJ
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1970, 53 (08) : 440 - +
  • [29] LOW-TEMPERATURE RADIATIVE PARAMAGNETIC CENTERS IN CA3GA2GE3O12
    NOSENKO, AE
    PADLYAK, BV
    FIZIKA TVERDOGO TELA, 1989, 31 (02): : 245 - 248
  • [30] Preparation and characterization of Ni/A12O3 wax hydrofining catalyst
    School of Chemical Engineering, East China University of Science and Technology, Shanghai 200237, China
    不详
    Hua Dong Li Gong Da Xue/J East China Univ Sci Technol, 2006, 3 (259-263+277):