TRANSMISSION ELECTRON-MICROSCOPY AND RUTHERFORD BACKSCATTERING STUDIES OF SINGLE AND DOUBLE DISCRETE BURIED DAMAGE LAYERS IN P+ IMPLANTED SI ON SUBSEQUENT LASER ANNEALING

被引：5

作者：

SADANA, DK ^{[1
]}

STRATHMAN, M ^{[1
]}

WASHBURN, J ^{[1
]}

BOOKER, GR ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MET,OXFORD,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.328756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：744 / 747

页数：4

共 8 条

[1] TRANSMISSION ELECTRON-MICROSCOPY AND RUTHERFORD BACKSCATTERING STUDIES DIFFERENT DAMAGE STRUCTURES IN P+ IMPLANTED SI
SADANA, DK
STRATHAM, M
WASHBURN, J
BOOKER, GR
JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5718 - 5724
[2] TEM, RBS, ELECTRICAL, AND SIMS STUDIES OF BURIED AMORPHOUS LAYERS IN P+ IMPLANTED SI ON SUBSEQUENT FURNACE ANNEALING
SADANA, DK
BOOKER, GR
STRATHMAN, M
WASHBURN, J
MAGEE, CW
MAENPAA, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C92 - C92
[3] ELECTRICAL, RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF FURNACE ANNEALED ZINC IMPLANTED GAAS
KULAR, SS
SEALY, BJ
STEPHENS, KG
SADANA, D
BOOKER, GR
SOLID-STATE ELECTRONICS, 1980, 23 (08) : 831 - &
[4] ANNEALING BEHAVIOR OF DYSPROSIUM ION-IMPLANTED NICKEL - COMBINED STUDY USING RUTHERFORD BACKSCATTERING, TRANSMISSION ELECTRON-MICROSCOPY, AND TOTAL CURRENT SPECTROSCOPY
CHADDERTON, LT
JOHNSON, E
KOMOLOV, SA
NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 639 - 645
[5] RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDY ON PHASE-TRANSFORMATION OF AS HEAVILY DOPED SI DURING POST-RAPID-THERMAL ANNEALING
LU, ZH
JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 1756 - 1760
[6] ION-BOMBARDMENT INDUCED AMORPHOUS LAYERS ON SINGLE-CRYSTAL STAINLESS-STEEL - A COMBINED RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDY
GRANT, WA
WHITTON, JL
WILLIAMS, JS
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 49 (1-3): : 65 - 69
[7] COMPARATIVE-STUDY OF THE EFFECT OF ANNEALING OF NITROGEN-IMPLANTED SILICON-ON-INSULATOR STRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY, CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY AND RUTHERFORD BACKSCATTERING SPECTROSCOPY
LOHNER, T
SKORUPA, W
FRIED, M
VEDAM, K
NGUYEN, N
GROTZSCHEL, R
BARTSCH, H
GYULAI, J
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (1-2): : 177 - 184
[8] DIRECT OBSERVATION OF DISCRETE LAYERS OF DISLOCATION LOOPS NEAR THE PROJECTED ION RANGES IN HIGH-DOSE P+-IMPLANTED (001)SI BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY
HSU, SN
CHEN, LJ
CHAO, WY
APPLIED PHYSICS LETTERS, 1989, 55 (06) : 565 - 567

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