INHERENT AND STRESS-INDUCED LEAKAGE IN HEAVILY DOPED SILICON JUNCTIONS

被引：44
|
作者：
HACKBARTH, E
TANG, DD
机构：
[1] IBM T J Watson Research Cent,, Yorktown Heights, NY, USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期
关键词：
D O I：
10.1109/16.8784
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
18
引用
收藏
页码：2108 / 2118
页数：11
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