QUANTITATIVE ELECTRON-MICROPROBE ANALYSIS OF THIN W-SI FILMS ON AN SI SUBSTRATE

Monte Carlo simulation is applied to quantitative analysis of thin binary films, one of the constituent elements of which is contained in a substrate. The simulation is based on both the Mott cross section and the energy loss law of Bethe. The k ratios from the samples are measured at various incident electron energies. Monte Carlo analysis was done, based on the measured k ratios. At low energies, the composition of the film is found with a regular ZAF method because the sample seems to be suitable to be considered as a bulk material. At high energies, the composition and thickness of the film are obtained with the above simulation program. When the mean ionization potentials of Duncumb and Reed are used in the simulation, the concentrations obtained at low and high energies agree well with each other. The choice of ionization cross sections is also discussed in terms of use of the Bethe-type formula.