FREQUENCY AND TEMPERATURE DEPENDENCE OF C-V CHARACTERISTICS AT GE-SIO2 INTERFACE AND BT TREATMENTS

被引：7
|
作者：
YASHIRO, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1970年 / 9卷 / 07期
关键词：
D O I：
10.1143/JJAP.9.740
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：740 / &
相关论文
共 50 条
  • [21] C-V characteristics of SiO2 thin films prepared by sol-gel method
    Liu, Y
    Zhai, JW
    Ying, MZ
    Zhang, LG
    Yao, X
    ISE 9 - 9TH INTERNATIONAL SYMPOSIUM ON ELECTRETS, PROCEEDINGS, 1996, : 706 - 709
  • [22] CURRENT AND C-V INSTABILITIES IN SIO2 AT HIGH FIELDS
    SOLOMON, PM
    AITKEN, JM
    APPLIED PHYSICS LETTERS, 1977, 31 (03) : 215 - 217
  • [23] Peculiarities of C-V characteristics of PZT films depending on annealing temperature
    Kamenshchikov, M. V.
    Solnyshkin, A. V.
    Pronin, I. P.
    FERROELECTRICS, 2017, 508 (01) : 108 - 114
  • [24] TEMPERATURE-DEPENDENCE OF IV AND C-V CHARACTERISTICS OF NI/N-CDF2 SCHOTTKY-BARRIER TYPE DIODES
    COVA, P
    SINGH, A
    SOLID-STATE ELECTRONICS, 1990, 33 (01) : 11 - 19
  • [25] RC Model for Frequency Dependence of Split C-V Measurements on Bare SOI Wafers
    Diab, Amer
    Ionica, Irina
    Ghibaudo, Gerard
    Cristoloveanu, Sorin
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (06) : 792 - 794
  • [26] Series and parallel resistance effects on the C-V and G-V characteristics of Al/SiO2/Si structure
    Rejaiba, Omar
    Brana, Alejandro F.
    Matoussi, Adel
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2016, 15 (03) : 831 - 838
  • [27] An improved high frequency C-V method for interface state analysis on MIS structures
    Koukab, A
    Bath, A
    Losson, E
    SOLID-STATE ELECTRONICS, 1997, 41 (04) : 635 - 641
  • [28] Effect of preoxidation treatment on the I-V and C-V characteristics of Si/SiO2/Al MIS diodes
    Majhi, J
    Benny, ETP
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (06) : 528 - 531
  • [29] TEMPERATURE-DEPENDENCE OF C-V AND G-V CHARACTERISTICS OF NATIVE OXIDE-GAAS INTERFACES OF (111) AND (100) ORIENTATIONS
    NARSALE, AM
    ARORA, BM
    SURFACE SCIENCE, 1987, 189 : 385 - 392
  • [30] Analyses of C-V characteristics of MFIS device under high and low frequency
    Cheng, J
    Lin, YY
    Tang, TA
    INTEGRATED FERROELECTRICS, 2005, 73 : 57 - 65
12345