FREQUENCY AND TEMPERATURE DEPENDENCE OF C-V CHARACTERISTICS AT GE-SIO2 INTERFACE AND BT TREATMENTS

被引：7
|
作者：
YASHIRO, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1970年 / 9卷 / 07期
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D O I：
10.1143/JJAP.9.740
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：740 / &
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