DISLOCATION NETWORKS IN SILICON-WAFERS LASER-FUSED TO SILICA SUBSTRATES

被引：0
|
作者：
GEYSELAERS, ML
READER, AH
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A cross-sectional transmission electron microscope study of the damage present in the silicon of a silicon on insulator structure (SOI) is presented. This SOI structure was produced by wafer bonding and local laser-fusing silicon to silicon dioxide substrates. Semi-circular dislocation networks form as a result of the laser beam/silicon interaction. A dislocation analysis is carried out to determine the nature of the damage.
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页码：575 / 580
页数：6
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