SECOND-ORDER RAMAN-SPECTRA AND LATTICE-DYNAMICS IN ALAS

被引:25
|
作者
AZUHATA, T
SOTA, T
SUZUKI, K
机构
[1] WASEDA UNIV,ADV RES CTR SCI & ENGN,SHINJUKU KU,TOKYO 169,JAPAN
[2] WASEDA UNIV,KAGAMI MEM LAB MAT SCI & TECHNOL,SHINJUKU KU,TOKYO 169,JAPAN
关键词
D O I
10.1088/0953-8984/7/9/018
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have re-examined the second-order Raman spectra in a thick AlAs layer grown on a GaAs substrate by polarized Raman spectroscopy. So as to reproduce the spectra, the force constants have been refined and then the phonon dispersion has been calculated within a modified version of the adiabatic bond-charge model. We present phonon frequencies at critical points, e.g. Gamma, X, L and W, and the force constants for AlAs. The phonon dispersion is compared with a previous ab initio result and it is shown that the procedure presented herein is useful. A brief discussion is also given of the analysis of the second-order Raman spectra of AlSb
引用
收藏
页码:1949 / 1957
页数:9
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