SUBSTRATE-TEMPERATURE DEPENDENCE OF TRANSPARENT CONDUCTING AL-DOPED ZNO THIN-FILMS PREPARED BY MAGNETRON SPUTTERING

被引:107
|
作者
MINAMI, T
SATO, H
IMAMOTO, H
TAKATA, S
机构
[1] Electron Device System Laboratory, Kanazawa Institute of Technology, Nonoichi, Ishikawa, 921
来源
关键词
TRANSPARENT ELECTRODE; TRANSPARENT CONDUCTING FILM; AL-DOPED ZNO; DC MAGNETRON SPUTTERING; THIN FILM; SPUTTERING; ZINC OXIDE;
D O I
10.1143/JJAP.31.L257
中图分类号
O59 [应用物理学];
学科分类号
摘要
A technique is demonstrated that improves the substrate spatial distributions of resistivity and film thickness of transparent conducting oxide thin films prepared using a conventional dc planar magnetron sputtering method. The spatial distributions of Al-doped ZnO (AZO) films are markedly improved by deposition onto substrates at temperatures above 300-degrees-C. Large-area AZO films with a resistivity of 3-6 x 10(-4) OMEGA . cm can be produced at a substrate temperature of 350-degrees-C.
引用
收藏
页码:L257 / L260
页数:4
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