SUBSTRATE-TEMPERATURE DEPENDENCE OF TRANSPARENT CONDUCTING AL-DOPED ZNO THIN-FILMS PREPARED BY MAGNETRON SPUTTERING

被引：107
|
作者：
MINAMI, T
SATO, H
IMAMOTO, H
TAKATA, S
机构：
[1] Electron Device System Laboratory, Kanazawa Institute of Technology, Nonoichi, Ishikawa, 921
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 3A期
关键词：
TRANSPARENT ELECTRODE; TRANSPARENT CONDUCTING FILM; AL-DOPED ZNO; DC MAGNETRON SPUTTERING; THIN FILM; SPUTTERING; ZINC OXIDE;
D O I：
10.1143/JJAP.31.L257
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A technique is demonstrated that improves the substrate spatial distributions of resistivity and film thickness of transparent conducting oxide thin films prepared using a conventional dc planar magnetron sputtering method. The spatial distributions of Al-doped ZnO (AZO) films are markedly improved by deposition onto substrates at temperatures above 300-degrees-C. Large-area AZO films with a resistivity of 3-6 x 10(-4) OMEGA . cm can be produced at a substrate temperature of 350-degrees-C.
引用
收藏
页码：L257 / L260
页数：4
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