HIGH-RATE REACTIVE ION ETCHING OF AL2O3 AND SI

被引：17
|
作者：
HEIMAN, N
MINKIEWICZ, V
CHAPMAN, B
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 03期
关键词：
D O I：
10.1116/1.570550
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：731 / 734
页数：4
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