CHARACTERIZATION OF ION-IMPLANTED N+ LAYERS ON TETRAHEDRICALLY TEXTURED SILICON SURFACES

被引：0
|
作者：
PEDULLI, L
PASINI, A
CORRERA, L
机构：
来源：
RADIATION EFFECTS LETTERS | 1982年 / 67卷 / 04期
关键词：
D O I：
10.1080/01422448208226867
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
6
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页码：113 / 118
页数：6
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