NICKEL ATOMIC DIFFUSION IN AMORPHOUS-SILICON

In this letter we report on measurements of the diffusion coefficient for Ni in unrelaxed amorphous (α) Si at temperatures between 270 and 435°C using secondary ion mass spectrometry. A diffusion coefficient of ∼3×10-3 exp[-1.30(eV)/kT] cm2/s is obtained, which is approximately six to eight orders of magnitude lower than that for interstitial diffusion of Ni in crystalline (c) Si. The diffusion process in α-Si is described by a model invoking trap-retarded interstitial migration; the main difference between the diffusion coefficients in α-Si and c-Si is attributed to the presence of intrinsic traps in the amorphous phase with a binding enthalpy of ∼0.83 eV.© 1995 American Institute of Physics.