MECHANICAL-BEHAVIOR OF CUPROUS-OXIDE

被引：10
|
作者：
TORRESVILLASENOR, G [1 ]
BARRIOPAREDES, R [1 ]
RADCLIFFE, SV [1 ]
机构：
[1] CASE WESTERN RESERVE UNIV,DIV MET & MAT SCI,CLEVELAND,OH 44106
来源：
JOURNAL OF MATERIALS SCIENCE | 1978年 / 13卷 / 10期
关键词：
D O I：
10.1007/BF00541670
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2164 / 2170
页数：7
相关论文
共 50 条
  • [41] PHYSICOCHEMICAL PROPERTIES OF CUPROUS-OXIDE AT HIGH-TEMPERATURE
    MALUENDA, J
    FARHI, R
    PETOTERVAS, G
    REVUE INTERNATIONALE DES HAUTES TEMPERATURES ET DES REFRACTAIRES, 1980, 17 (02): : 148 - 153
  • [42] ELECTRICAL-PROPERTIES AND DEEP LEVELS IN CUPROUS-OXIDE
    TAPIERO, M
    NOGUET, C
    ZIELINGER, JP
    GOLTZENE, A
    SCHWAB, C
    ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 1979, 4 (6-7): : 479 - 487
  • [43] PREPARATION, CHARACTERISTICS AND PHOTOVOLTAIC PROPERTIES OF CUPROUS-OXIDE - A REVIEW
    RAKHSHANI, AE
    SOLID-STATE ELECTRONICS, 1986, 29 (01) : 7 - 17
  • [44] RESONANT BRILLOUIN-SCATTERING IN CUPROUS-OXIDE - THEORY
    SO, VCY
    SIPE, JE
    FUKUI, M
    STEGEMAN, GI
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (30): : 4487 - 4504
  • [45] Electronic structure modifications of cuprous-oxide films by ions
    Matsunami, N.
    Fukuoka, O.
    Tazawa, M.
    Kakiuchida, H.
    Sataka, M.
    SURFACE & COATINGS TECHNOLOGY, 2009, 203 (17-18): : 2642 - 2645
  • [46] STIMULATED STARK EFFECT DUE TO EXCITONS IN CUPROUS-OXIDE
    SHMIGLYUK, MI
    MOSKALENKO, SA
    BARDETSKII, PI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (05): : 582 - 586
  • [47] THERMODYNAMICS AND KINETICS OF POINT-DEFECTS IN CUPROUS-OXIDE
    MROWEC, S
    STOKLOSA, A
    GODLEWSKI, K
    CRYSTAL LATTICE DEFECTS, 1974, 5 (3-4): : 239 - 255
  • [48] DIELECTRIC AND LATTICE VIBRATIONAL-SPECTRUM OF CUPROUS-OXIDE
    DAWSON, P
    HARGREAVE, MM
    WILKINSON, GR
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (12) : 2201 - 2208
  • [49] PHOTOELECTRIC MEMORY AND PHOTOCHEMICAL REACTIONS IN CUPROUS-OXIDE CRYSTALS
    GAPLEVSKAYA, SP
    EZHIK, II
    RVACHEV, AL
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (08): : 1041 - 1042
  • [50] ELECTRON-MICROSCOPY OF CUPROUS-OXIDE ISLAND GROWTH
    GOULDEN, DA
    PHILOSOPHICAL MAGAZINE, 1976, 33 (03): : 393 - 408
12345