MILLIMETER-WAVE GENERATION AND CHARACTERIZATION OF A GAAS-FET BY OPTICAL MIXING

被引：16

作者：

NI, DC ^{[1
]}

FETTERMAN, HR ^{[1
]}

CHEW, W ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91109

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1990年 / 38卷 / 05期

关键词：

D O I：

10.1109/22.54929

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Coherent mixing of optical radiation from a tunable CW dye laser and a stabilized He—Ne laser was used to generate millimeter-wave signals in GaAs FET’s attached to printed circuit millimeter-wave antennas. The generated signal was further down-converted to a 2 GHz IF by an antenna-coupled millimeter-wave LO at 62 GHz. Detailed characterizations of power and S/N under different bias conditions have been performed. This technique is expected to allow signal generation and frequency-response evaluation of millimeter-wave devices at frequencies as high as 100 GHz. © 1990 IEEE

引用

页码：608 / 614

页数：7

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