共 50 条
- [34] Low-temperature infrared absorption measurement for oxygen concentration and precipitates in heavily-doped silicon wafers DEFECTS IN ELECTRONIC MATERIALS II, 1997, 442 : 31 - 36
- [35] DETERMINATION OF THE IMPURITY CONCENTRATION IN HEAVILY-DOPED INHOMOGENEOUS SEMICONDUCTORS FROM THE MEASUREMENT OF THE LOW-TEMPERATURE CONDUCTIVITY APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 61 (02): : 115 - 118
- [38] Phonon-assisted deep level luminescence in heavily Mg-doped InGaN Journal of Electronic Materials, 2004, 33 : 431 - 435
- [40] Nickel-based germanosilicide of heavily-doped SiGe films for low resistance and high-temperature stability ADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2, 2007, 124-126 : 279 - +