STRESS COMPENSATION IN GA1-XALXAS1-YPY LPE LAYERS ON GAAS SUBSTRATES

被引：50
|
作者：
ROZGONYI, GA [1 ]
PANISH, MB [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 10期
关键词：
D O I：
10.1063/1.1654738
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：533 / 535
页数：3
相关论文
共 50 条
  • [41] TEMPERATURE-DEPENDENCE OF SPONTANEOUS PEAK WAVELENGTH IN GAAS AND GA1-XALXAS ELECTROLUMINESCENT LAYERS
    DYMENT, JC
    CHENG, YC
    SPRINGTHORPE, AJ
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1739 - 1743
  • [42] MULTIBARRIER TUNNELING IN GA1-XALXAS/GAAS HETEROSTRUCTURES
    VASSELL, MO
    LEE, J
    LOCKWOOD, HF
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5206 - 5213
  • [43] INTERSUBBAND ENERGIES IN GAAS-GA1-XALXAS HETEROJUNCTIONS
    WIECK, AD
    MAAN, JC
    MERKT, U
    KOTTHAUS, JP
    PLOOG, K
    WEIMANN, G
    PHYSICAL REVIEW B, 1987, 35 (08): : 4145 - 4148
  • [44] LPE法生长掺镁Ga1-xAlxAs-GaAs高效太阳电池材料
    许郁苍
    杨倩志
    王振英
    王兴达
    闵惠芳
    太阳能学报, 1982, (03) : 283 - 290
  • [45] Exciton dynamics in GaAs/Ga1-xAlxAs heterojunctions and GaAs epilayers
    Shen, JX
    Pittini, R
    Oka, Y
    Kurtz, E
    PHYSICAL REVIEW B, 2000, 61 (04): : 2765 - 2772
  • [46] DIELECTRIC RESPONSE TO A DONOR ION IN A GA1-XALXAS-GAAS-GA1-XALXAS QUANTUM-WELL OF FINITE DEPTH
    CSAVINSZKY, P
    ELABSY, AM
    INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 1986, : 325 - 333
  • [47] LPE GROWTH OF IN1-XGAXP/GA1-YALYAS ON GAAS
    OHTA, I
    KAZUMURA, M
    TERAMOTO, I
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 59 - 64
  • [48] NONLINEAR AS(P) INCORPORATION IN GAAS1-YPY ON GAAS AND INAS1-YPY ON INP
    CUNNINGHAM, JE
    WILLIAMS, MD
    PATHAK, RN
    JAN, W
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 492 - 496
  • [49] LPE GROWTH OF GA1-XINXSB MULTIGRADING LAYERS
    GONG, XY
    OKITSU, K
    OZAWA, T
    HAWAKAWA, Y
    YAMAGUCHI, T
    KUMAGAWA, M
    CRYSTAL RESEARCH AND TECHNOLOGY, 1992, 27 (05) : 609 - 616
  • [50] EXCITON-STATES IN THE GAAS/GA1-XALXAS CORRUGATED SUPERLATTICES GROWN ON (311)-ORIENTED SUBSTRATES
    XIA, JB
    LI, SS
    PHYSICAL REVIEW B, 1995, 51 (23) : 17203 - 17206
12345