INVESTIGATION OF THE KINETICS OF ELECTRICAL BREAKDOWN OF TANTALUM OXIDE LAYERS

被引：1
|
作者：
LALEKO, VA
DRAGAN, II
ERSHOVA, NY
机构：
[1] Department of Solid State Physics, Petrozavodsk State University
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1994年 / 141卷 / 01期
关键词：
D O I：
10.1002/pssa.2211410127
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K11 / K14
页数：4
相关论文
共 50 条
  • [41] ELECTRICAL BREAKDOWN OF LUTECIUM OXIDE-FILMS
    ROZHKOV, VA
    PETROV, AI
    GONCHAROV, VP
    FIZIKA TVERDOGO TELA, 1995, 37 (02): : 491 - 498
  • [42] ELECTRICAL BREAKDOWN CHARACTERISTICS OF OXIDE FILMS ON SILICON
    CHOU, NJ
    ELDRIDGE, JM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (08) : C260 - &
  • [43] ELECTRICAL PULSE BREAKDOWN OF SILICON OXIDE FILMS
    KLEIN, N
    BURSTEIN, E
    JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2728 - +
  • [44] INVESTIGATION OF CONDUCTION IN ANODIC TANTALUM OXIDE-FILMS FORMED ON SPUTTERED TANTALUM
    JONES, MW
    HUGHES, DM
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (01) : 112 - 119
  • [45] INVESTIGATION OF HIGH-VACUUM ELECTRICAL BREAKDOWN
    TARASOVA, LV
    KALININ, VG
    SOVIET PHYSICS-TECHNICAL PHYSICS, 1964, 9 (04): : 514 - +
  • [46] Investigation of electrical breakdown properties in curved electrodes
    Uhm, HS
    PHYSICS OF PLASMAS, 2000, 7 (11) : 4748 - 4754
  • [47] Effect of mechanical loading on the kinetics of electrical breakdown in polymers
    Slutsker, A. I.
    Gilyarov, V. L.
    Polikarpov, Yu. I.
    TECHNICAL PHYSICS, 2008, 53 (11) : 1447 - 1450
  • [48] Effect of mechanical loading on the kinetics of electrical breakdown in polymers
    A. I. Slutsker
    V. L. Gilyarov
    Yu. I. Polikarpov
    Technical Physics, 2008, 53 : 1447 - 1450
  • [49] Electrical characterization of the soft breakdown failure mode in MgO layers
    Miranda, E.
    O'Connor, E.
    Cherkaoui, K.
    Monaghan, S.
    Long, R.
    O'Connell, D.
    Hurley, P. K.
    Hughes, G.
    Casey, P.
    APPLIED PHYSICS LETTERS, 2009, 95 (01)
  • [50] Formation of silicon-oxide layers at the interface between tantalum oxide and silicon substrate
    Ono, H
    Koyanagi, K
    APPLIED PHYSICS LETTERS, 1999, 75 (22) : 3521 - 3523
12345