共 50 条
- [21] THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTIONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (05) : 585 - 592FERGUSSON, RRGABOR, T
- [22] KINETICS OF THE REACTION OF GALLIUM-ARSENIDE WITH MOLECULAR CHLORINEJOURNAL OF CHEMICAL PHYSICS, 1988, 89 (05): : 2844 - 2847HA, JHOGRYZLO, EAPOLYHRONOPOULOS, S
- [23] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE-GALLIUM ARSENIDE INTERFACEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1410 - +FOSTER, JESWARTZ, JM
- [24] ELECTRICAL-PROPERTIES OF GALLIUM ARSENIDE-INSULATOR INTERFACEJOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1402 - 1407MEINERS, LG
- [25] TOPOTACTIC REACTION BETWEEN NICKEL AND GALLIUM-ARSENIDEJOURNAL OF APPLIED CRYSTALLOGRAPHY, 1973, 6 (DEC1) : 425 - 437SCOBEY, IHWALLACE, CAWARD, RCC
- [26] THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTIONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (03) : C64 - C64FERGUSSON, RRGABOR, TMASCIA, N
- [27] EFFECT OF THE INTERFACE ON RADIATION DEFECT FORMATION IN GALLIUM-ARSENIDERADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4): : 249 - 252BORKOVSKAYA, OYDMITRUK, NLKONAKOVA, RVLITOVCHENKO, VGTKHORIK, YASHAKHOVTSOV, VI
- [28] ATOM PROBE MICROANALYSIS OF THE GOLD-GALLIUM ARSENIDE INTERFACEJOURNAL DE PHYSIQUE, 1987, 48 (C-6): : 463 - 468ANDREN, HO
- [29] PLATINUM CONTAMINATION OF OXIDE GROWN BY PLASMA ANODIZATION OF GALLIUM-ARSENIDESURFACE AND INTERFACE ANALYSIS, 1988, 11 (11) : 553 - 558LANYI, SPAVLYAK, FPINCIK, E
- [30] MORPHOLOGICAL DEVELOPMENT DURING PLATINUM GALLIUM-ARSENIDE INTERFACIAL REACTIONSJOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (06) : 581 - 589SCHULZ, KJZHENG, XYLIN, JCCHANG, YA