SIMULATION OF TEMPERATURE AND BIAS DEPENDENCIES OF BETA AND VTO OF GAAS-MESFET DEVICES

被引：8
|
作者：
RODRIGUEZTELLEZ, J
STOTHARD, BP
机构：
[1] The Department of Electronic and Electrical Engineering, University of Bradford, West Yorkshire
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 10期
关键词：
D O I：
10.1109/16.277327
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new dc and temperature nonlinear GaAs MESFET device model is presented. This offers improved accuracy over existing models by simulating the bias dependency of the device transconductance (beta) and pinch-off point (V(TO)) parameters. The effect of these bias dependencies becomes more important as a departure from room temperature is made. New expressions for simulating the temperature dependency of V(TO) and beta are also presented and these provide improved accuracy over existing techniques. The new model effectively couples together the bias and temperature dependency of the device.
引用
收藏
页码：1730 / 1735
页数：6
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