ANNEALING EFFECTS AND OXIDE STRUCTURE IN ALUMINA TUNNELING BARRIERS

被引:14
|
作者
SCHAFER, J
ADKINS, CJ
机构
[1] Cavendish Lab., Cambridge Univ.
关键词
D O I
10.1088/0953-8984/3/17/008
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this work we have studied changes in aluminium-oxide-aluminium tunnel barrier parameters that result from annealing at different temperatures with and without an applied potential difference. We identify two processes: irreversible increase in mean barrier height which takes place under all conditions and reversible changes in the internal field produced by applied bias. We explain the observations in terms of a detailed microscopic model involving excess Al3+ in the barrier region and field-induced movement of ions. The model implies that the oxide grows by the classic Cabrera-Mott mechanism with aluminium as the mobile species, and it sheds light on the nature of the oxide and of the interfacial regions in this technologically important system.
引用
收藏
页码:2907 / 2915
页数:9
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