ELECTRON DIFFRACTION INVESTIGATIONS OF SEMICONDUCTORS AND OXIDES STRUCTURES

被引:0
|
作者
PINSKER, ZG
KHITROVA, VI
IMAMOV, RM
SEMILETO.SA
机构
关键词
D O I
暂无
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:S113 / &
相关论文
共 50 条
  • [41] Role of electron powder diffraction in solving structures
    Lábár, JL
    ELECTRON CRYSTALLOGRAPHY: NOVEL APPROACHES FOR STRUCTURE DETERMINATION OF NANOSIZED MATERIALS, 2006, 211 : 185 - 195
  • [42] Electron backscatter diffraction on pearlite structures in steel
    Walentek, A.
    Seefeldt, M.
    Verlinden, B.
    Aernoudt, E.
    Van Houtte, P.
    JOURNAL OF MICROSCOPY-OXFORD, 2006, 224 : 256 - 263
  • [43] ELECTRON-DIFFRACTION FROM NONPERIODIC STRUCTURES
    CLARK, ES
    WEEKS, JJ
    EBY, RK
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1979, (SEP): : 47 - 47
  • [44] A REINVESTIGATION OF THE STRUCTURES OF DIBORANE AND ETHANE BY ELECTRON DIFFRACTION
    HEDBERG, K
    SCHOMAKER, V
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1951, 73 (04) : 1482 - 1487
  • [45] ELECTRON-DIFFRACTION AND MICROSCOPY OF THE STRUCTURES OF LA-BA(SR)-CU OXIDES AT LIQUID-HELIUM TEMPERATURE
    HIROTSU, Y
    NAGAKURA, S
    MURATA, Y
    NISHIHARA, T
    TAKATA, M
    YAMASHITA, T
    IWATSUKI, M
    HARADA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05): : L685 - L687
  • [46] Transmission electron diffraction techniques for NM scale strain measurement in semiconductors
    Vanhellemont, J
    Janssens, KGF
    Frabboni, S
    Smeys, P
    Balboni, R
    Armigliato, A
    SURFACE/INTERFACE AND STRESS EFFECTS IN ELECTRONIC MATERIALS NANOSTRUCTURES, 1996, 405 : 435 - 446
  • [48] Transmission electron diffraction techniques for nm scale strain measurement in semiconductors
    Vanhellemont, J
    Janssens, KGF
    Frabboni, S
    Smeys, P
    Balboni, R
    Armigliato, A
    DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II, 1996, 406 : 479 - 490
  • [49] FACETED STRUCTURES STUDIED BY LOW-ENERGY ELECTRON-DIFFRACTION - ITS APPLICATION TO III-V-COMPOUND SEMICONDUCTORS
    CHEN, P
    HOU, XY
    DING, XM
    DONG, GS
    YANG, S
    WANG, X
    CHINESE PHYSICS, 1986, 6 (03): : 755 - 762
  • [50] Diffraction investigations of the radiation strength of vanadium dioxide interference structures
    E. I. Shadrin
    F. A. Chudnovskii
    K. Sh. Tsibadze
    I. A. Khakhaev
    Technical Physics, 1997, 42 : 403 - 405