INFRARED ABSORPTION IN N-TYPE ALUMINUM ANTIMONIDE

被引：53

作者：

TURNER, WJ

REESE, WE

机构：

来源：

PHYSICAL REVIEW | 1960年 / 117卷 / 04期

关键词：

D O I：

10.1103/PhysRev.117.1003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1003 / 1004

页数：2

共 50 条

[41] HEAVILY DOPED CRYSTALS OF N-TYPE INDIUM-ANTIMONIDE
FILIPCHENKO, AS
NASLEDOV, DN
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 27 (01): : 11 - 26
[42] ELECTRICAL CONDUCTIVITY OF N-TYPE INDIUM ANTIMONIDE AT LOW TEMPERATURES
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LIFSHITS, TM
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[43] Nonthermal broadening of landau levels in n-type indium antimonide
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[44] GENERATION OF MICROWAVE RADIATION IN N-TYPE INDIUM-ANTIMONIDE
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[45] MICROWAVE EMISSION FROM BULK OF N-TYPE INDIUM ANTIMONIDE
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PHYSICAL REVIEW LETTERS, 1970, 25 (10) : 665 - &
[46] GENERATION OF MICROWAVE RADIATION IN N-TYPE INDIUM ANTIMONIDE.
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Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (04): : 474 - 477
[47] ELECTRICAL CONDUCTIVITY OF N-TYPE INDIUM ANTIMONIDE AT LOW TEMPERATURES
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KOGAN, SM
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OLEINIKOV, AY
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[48] ELECTRICAL PROPERTIES OF HEAVILY DOPED N-TYPE INDIUM ANTIMONIDE
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OKUN, LS
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 5 (03): : 597 - +
[49] HALL VELOCITY OF HOT ELECTRONS IN N-TYPE INDIUM ANTIMONIDE
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[50] ELECTRICAL PROPERTIES OF PLASTICALLY DEFORMED INDIUM ANTIMONIDE OF N-TYPE
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