REVERSE-BIAS ANNEALING KINETICS OF MG-H COMPLEXES IN INP

被引:12
|
作者
BALASUBRAMANIAN, S [1 ]
KUMAR, V [1 ]
BALASUBRAMANIAN, N [1 ]
机构
[1] INDIAN TEL IND LTD,MICROELECTR LAB,BANGALORE 560016,INDIA
关键词
D O I
10.1063/1.354369
中图分类号
O59 [应用物理学];
学科分类号
摘要
The reactivation kinetics of hydrogen-passivated Mg acceptors in InP have been studied by annealing experiments carried out with different reverse biases. It is shown using a new analysis that the actual dissociation energy of the Mg-H complexes can be estimated even without applying a sufficient reverse bias to overcome retrapping of H at the dopant site. The dissociation process follows a first-order kinetics and the dissociation frequency and activation energy were estimated at various depths ranging from the surface up to 0.5 mum using an empirical analysis of the experimental data. A bias-independent dissociation energy of 1.40 +/- 0.08 eV was obtained when estimated at the surface. An apparently higher dissociation energy results when calculated in the bulk. This overestimation is pronounced for low-bias anneals and is explained as a result of retrapping. The concentration profile data is consistent with the positively charged state of the diffusing H in p-InP.
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页码:4521 / 4526
页数:6
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