IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING

被引：158
|
作者：
FORREST, SR [1 ]
LEHENY, RF [1 ]
NAHORY, RE [1 ]
POLLACK, MA [1 ]
机构：
[1] BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 03期
关键词：
D O I：
10.1063/1.91922
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：322 / 325
页数：4
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