IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING

被引：157

作者：

FORREST, SR ^{[1
]}

LEHENY, RF ^{[1
]}

NAHORY, RE ^{[1
]}

POLLACK, MA ^{[1
]}

机构：

[1] BELL TEL LABS INC, HOLMDEL, NJ 07733 USA

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 03期

关键词：

D O I：

10.1063/1.91922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：322 / 325

页数：4

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[1] ANALYSIS OF THE DARK CURRENT AND PHOTORESPONSE OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES
FORREST, SR
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[J]. SOLID-STATE ELECTRONICS, 1983, 26 (10) : 951 - 968
[2] PERFORMANCE OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (12) : 2040 - 2048
[3] CHARACTERIZATION OF IN0.53GA0.47AS PHOTO-DIODES EXHIBITING LOW DARK CURRENT AND LOW JUNCTION CAPACITANCE
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DEWINTER, JC
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 227 - 231
[4] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 95 - 98
[5] PLANAR IN0.53GA0.47AS AVALANCHE PHOTO-DIODES WITH GUARD-RING STRUCTURE
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : 1441 - 1442
[6] Highly uniform regrown In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes on In0.53Ga0.47As
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (2B): : 1204 - 1207
[7] Highly uniform regrown In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes on In0.53Ga0.47As
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[J]. 1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 568 - 570
[8] Highly uniform regrown In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes on In0.53Ga0.47As
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[J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (2 B): : 1204 - 1207
[9] TUNNELING CURRENTS IN IN0.53GA0.47AS HOMOJUNCTION DIODES AND DESIGN OF INGAAS-INP HETERO-STRUCTURE AVALANCHE PHOTO-DIODES
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[J]. SOLID-STATE ELECTRONICS, 1981, 24 (05) : 421 - 424
[10] PERFORMANCE OF INXGA1-XASYP1-Y PHOTO-DIODES WITH DARK CURRENT LIMITED BY DIFFUSION, GENERATION RECOMBINATION, AND TUNNELING
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 217 - 226

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