LOW-TEMPERATURE SELECTIVE EPITAXIAL-GROWTH OF SILICON AT ATMOSPHERIC-PRESSURE

被引：76
|
作者：
SEDGWICK, TO
BERKENBLIT, M
KUAN, TS
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 26期
关键词：
D O I：
10.1063/1.101036
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2689 / 2691
页数：3
相关论文
共 50 条
  • [31] DIISOPROPYLANTIMONYHYDRIDE (DIPSBH) FOR LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB
    SHIN, J
    CHIU, K
    STRINGFELLOW, GB
    GEDRIDGE, RW
    JOURNAL OF CRYSTAL GROWTH, 1993, 132 (3-4) : 371 - 376
  • [32] Plasma etch effects on low-temperature selective epitaxial growth of silicon
    1600, (71):
  • [33] LOW-TEMPERATURE EPITAXIAL-GROWTH OF 3C-SIC ON (111) SILICON SUBSTRATES
    HIRABAYASHI, Y
    KOBAYASHI, K
    KARASAWA, S
    JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 284 - 286
  • [34] Application of Low-Temperature Atmospheric-Pressure Plasma in Metallurgy
    Gadzhiev, M. Kh
    Il'ichev, M., V
    Yusupov, D., I
    Tyuftyaev, A. S.
    RUSSIAN METALLURGY, 2021, 2021 (12): : 1504 - 1509
  • [35] Application of Low-Temperature Atmospheric-Pressure Plasma in Metallurgy
    M. Kh. Gadzhiev
    M. V. Il’ichev
    D. I. Yusupov
    A. S. Tyuftyaev
    Russian Metallurgy (Metally), 2021, 2021 : 1504 - 1509
  • [36] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON SILICON AND SILICON ON SAPPHIRE INCORPORATING A LOW-TEMPERATURE BUFFER
    METZGER, RA
    DELANEY, MJ
    MCCRAY, L
    KANBER, H
    WANG, DC
    CHI, TY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 297 - 300
  • [37] LOW-TEMPERATURE SILICON GERMANIUM EPITAXIAL-GROWTH ON SILICON USING CONTAMINATION-MINIMIZED CVD PROCESSING
    CHENG, ML
    SATO, T
    KOBAYASHI, S
    KOHLHASE, A
    MUROTA, J
    MIKOSHIBA, N
    FIRST INTERNATIONAL MEETING ON ADVANCED PROCESSING AND CHARACTERIZATION TECHNOLOGIES: FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC DEVICES AND INTEGRATED CIRCUITS, VOLS 1 AND 2, 1989, : A107 - A110
  • [38] An Atmospheric-Pressure Low-Temperature Plasma Jet for Growth Inhibition of Escherichia Coli
    Wagenaars, Erik
    van der Woude, Marjan
    Vann, Roddy
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2011, 39 (11) : 2346 - 2347
  • [39] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SI AND SIGE LAYERS AT ATMOSPHERIC-PRESSURE
    DEBOER, WB
    MEYER, DJ
    APPLIED PHYSICS LETTERS, 1991, 58 (12) : 1286 - 1288
  • [40] SILICON DIOXIDE DEPOSITION BY ATMOSPHERIC-PRESSURE AND LOW-TEMPERATURE CVD USING TEOS AND OZONE
    FUJINO, K
    NISHIMOTO, Y
    TOKUMASU, N
    MAEDA, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (09) : 2883 - 2887
12345