MODELING OF TEMPERATURE-DEPENDENT TRANSPORT PARAMETERS FOR LOW-TEMPERATURE BIPOLAR-TRANSISTOR SIMULATION

被引：0
|
作者：
CHRZANOWSKAJESKE, M [1 ]
JAEGER, RC [1 ]
机构：
[1] AUBURN UNIV,DEPT ELECT ENGN,AUBURN,AL 36849
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C426 / C426
页数：1
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