INITIAL-STAGE GROWTH OF IN AND AL ON A SINGLE-DOMAIN SI(001)2X1 SURFACE

被引:47
|
作者
YEOM, HW
ABUKAWA, T
NAKAMURA, M
SUZUKI, S
SATO, S
SAKAMOTO, K
SAKAMOTO, T
KONO, S
机构
[1] TOHOKU UNIV, FAC SCI, DEPT PHYS, SENDAI, MIYAGI 98077, JAPAN
[2] TOHOKU UNIV, SCI MEASUREMENTS RES INST, SENDAI, MIYAGI 98077, JAPAN
[3] ELECTROTECH LAB, TSUKUBA, IBARAKI 305, JAPAN
关键词
ADATOMS; ALUMINUM; GROWTH; INDIUM; LOW ENERGY ELECTRON DIFFRACTION (LEED); LOW INDEX SINGLE CRYSTAL SURFACES; METAL-SEMICONDUCTOR INTERFACES; SILICON; X-RAY PHOTOELECTRON SPECTROSCOPY;
D O I
10.1016/0039-6028(95)00688-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Initial stage growth of In and Al on a wide-terrace single-domain Si(001)2 X 1 surface has been studied by low-energy electron diffraction (LEED) and X-ray photoelectron spectroscopy. Several submonolayer phases that were not reported on double-domain Si(001)2 X 1 substrates are observed, in addition to those already reported. The resulting sequences of two-dimensional (2D) phases for In and Al coverages of less than or equal to 0.5 ML can be interpreted based on an order-disorder transition of arrays of 1D metal-dimer chains. The results show close resemblance to the initial growth of Ga on Si(001) and thus indicate that there is a general mode of growth for the Group-III metals on a Si(001)2 X 1 surface below 0.5 ML. Growth for coverages greater than 0.5 ML and the onset of 3D growth are also discussed.
引用
收藏
页码:328 / 334
页数:7
相关论文
共 50 条
  • [41] ELECTRONIC-STRUCTURES OF AS/SI(001) 2X1 AND SB/SI(001) 2X1 SURFACES
    LI, GW
    CHANG, YC
    PHYSICAL REVIEW B, 1994, 50 (12): : 8675 - 8680
  • [42] Initial-stage dihydride formation on Si(100)-2x1-H surface
    Fujimori, M
    Heike, S
    Suwa, Y
    Hashizume, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (11B): : L1387 - L1390
  • [43] SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS
    BRINGANS, RD
    UHRBERG, RIG
    OLMSTEAD, MA
    BACHRACH, RZ
    PHYSICAL REVIEW B, 1986, 34 (10): : 7447 - 7450
  • [44] Surface phonons of As:Si(111)-(1x1) and As:Si(001)-(2x1)
    Graschus, V
    Mazur, A
    Kruger, P
    Pollmann, J
    PHYSICAL REVIEW B, 1998, 57 (20) : 13175 - 13183
  • [45] Strained Ge overlayer on a Si(001)-(2X1) surface
    Kahng, SJ
    Ha, YH
    Moon, DW
    Kuk, Y
    PHYSICAL REVIEW B, 2000, 61 (16): : 10827 - 10831
  • [46] Atomic structure of a reconstructed Si(001)-(2x1) surface
    Kim, KS
    Kim, YW
    Park, NG
    Park, YC
    Kang, ST
    Kim, SS
    Choi, DS
    Whang, CN
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1996, 29 (04) : 476 - 481
  • [47] SURFACE VIBRATIONAL EXCITATIONS ON SI(001)-(2X1) - REPLY
    ALLAN, DC
    MELE, EJ
    PHYSICAL REVIEW LETTERS, 1986, 57 (14) : 1812 - 1812
  • [48] METALLIC SURFACE-STATE ON SI(001)-(2X1)
    XU, YB
    CHEN, XH
    LI, HY
    CHINESE PHYSICS, 1988, 8 (01): : 250 - 252
  • [49] Adsorption structure of Ba on an Si(001)-(2x1) surface
    Urano, T
    Tamiya, K
    Ojima, K
    Hongo, S
    Kanaji, T
    SURFACE SCIENCE, 1996, 357 (1-3) : 459 - 463
  • [50] Bonding and structure of the Si(001)(2x1)-Sb surface
    Jenkins, SJ
    Srivastava, GP
    SURFACE SCIENCE, 1996, 352 : 411 - 415