POLYSILICON OXIDATION SELF-ALIGNED MOS (POSA MOS) - A NEW SELF-ALIGNED DOUBLE SOURCE DRAIN ION-IMPLANTATION TECHNIQUE FOR VLSI

被引：3

|

作者：

HSIA, S

FATEMI, R

TENG, TC

DEORNELLAS, S

SUN, SC

SKINNER, C

机构：

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 02期

关键词：

D O I：

10.1109/EDL.1982.25470

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：40 / 42

页数：3

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