GRIN-PARABOLIC OPTICAL CAVITY CHARACTERISTIC STUDY IN ALGAAS-GAAS LASER

被引：0
|
作者：
ALFONSO, JAM [1 ]
ARENCIBIA, PD [1 ]
REYNA, FG [1 ]
机构：
[1] UNIV LA HABANA,FAC FIS,HAVANA,CUBA
来源：
REVISTA MEXICANA DE FISICA | 1994年 / 40卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
III thiS paper we study theoretically the characteristics of a GaAs-AlGaAs laser transverse optical cavity with a parabolic graded variation of the refractive index (GRIN-SCH). We give an exact solution of the wave equation and analyze the near field distribution as well as the values of the effective refactive index of the fundamental mode. The condition for a mono mode optical cavity are also deduced. The behavior of the confinement factor and the far field in the plane perpendicular to the active region are reported. The results for the GRIN-SCH structure are compared with a similar SCH-straight laser transverse optical cavity.
引用
收藏
页码：77 / 89
页数：13
相关论文
共 50 条
  • [31] ALGAAS-GAAS DOUBLE-HETEROSTRUCTURE SUPER-LUMINESCENT DIODES FOR OPTICAL-TRANSMISSION SYSTEMS
    BOECK, J
    AMANN, MC
    FREQUENZ, 1979, 33 (10) : 278 - 283
  • [32] Optical characterization of a GaAs/AlGaAs vertical cavity surface emitting quantum well laser structure grown by MOCVD
    Wu, H
    Dawson, P
    Hamilton, B
    OPTICS AND LASER TECHNOLOGY, 1996, 28 (05): : 355 - 361
  • [33] Second harmonic electroreflectance study of AlGaAs-GaAs asymmetric triangular and coupled double quantum wells
    Tiong, Kwong-Kau
    Lin, Der-Yuh
    Huang, Ying-Sheng
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (5 A): : 2729 - 2734
  • [34] Deep centers in AlGaAs/GaAs GRIN-SCH SQW laser structures grown by MBE and MOCVD
    Lu, LW
    Feng, SL
    Xu, JY
    Yang, H
    Wang, ZG
    Wang, J
    Wang, Y
    Ge, WK
    JOURNAL OF CRYSTAL GROWTH, 1996, 169 (04) : 643 - 648
  • [35] INJECTION-LOCKING OF A WIDE-STRIPE ALGAAS/GAAS GRIN-SCH SQW LASER
    LEOPOLD, MM
    PODGORNIK, RG
    WILLIAMS, RA
    ELECTRONICS LETTERS, 1986, 22 (23) : 1224 - 1225
  • [36] Second harmonic electroreflectance study of AlGaAs-GaAs asymmetric triangular and coupled double quantum wells
    Tiong, KK
    Lin, DY
    Huang, YS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (5A): : 2729 - 2734
  • [37] AlGaAs-GaAs buried heterostructure laser with in situ ECR or gas-phase etching and MOCVD regrowth process
    Ogura, M.
    Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory, 2000, 64 (03): : 67 - 78
  • [38] PATTERN EDGE EXTRACTION USING PARALLEL-CONNECTED ALGAAS-GAAS PN-PN OPTICAL SWITCHES
    HARA, K
    KOJIMA, K
    MITSUNAGA, K
    KYUMA, K
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (01) : 62 - 64
  • [39] AlGaAs/GaAs laser diodes with GaAs islands active region on a Si substrate with higher characteristic temperature
    Kazi, ZI
    Egawa, T
    Jimbo, T
    Umeno, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (1A): : 74 - 76
  • [40] AlGaAs/GaAs laser diodes with GaAs islands active region on a Si substrate with higher characteristic temperature
    Kazi, Zaman Iqbal
    Egawa, Takashi
    Jimbo, Takashi
    Umeno, Masayoshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (1 A): : 74 - 76
12345