Multi-Dielectric & Multi-Band operations on RF MEMS

被引：2

作者：

Gogna, Rahul ^{[1
]}

Gaba, Gurjot Singh ^{[1
]}

Jha, Mayuri ^{[1
]}

Prakash, Aditya ^{[1
]}

机构：

[1] Lovely Profess Univ, Discipline Elect & Elect Engn, Phagwara 144411, Punjab, India

来源：

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2016年 / 17卷 / 02期

关键词：

RF MEMS; Multi-band; Multi-dielectric; Low insertion; High isolation; Broadband antennas;

D O I：

10.4313/TEEM.2016.17.2.86

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ever increasing demand for microwave operated applications has cultivated need for high-performance universal systems capable of working on multi-bands. This objective can be realized using Multi-Dielectrics in RF MEMS capacitive switch. In this study, we present a detailed analysis of the effect of various dielectrics on switch performance. The design consists of a capacitive switch and performance is analyzed by changing the dielectric layers beneath the switch. The results are obtained using three different dielectrics including Silicon nitride (7.6), Hafnium dioxide (25) and Titanium oxide (50). Testing of proposed switch yields high isolation (-87.5 dB) and low insertion loss (-0.1 dB at 50 GHz) which is substantially better than the conventional switches. The operating bandwidth of the proposed switch (DC to 95 GHz) makes it suitable for wide band microwave applications.

引用

页码：86 / 91

页数：6

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