STRUCTURAL AND OPTICAL-PROPERTIES OF HIGHLY STRAINED INASXP1-X/INP HETEROSTRUCTURES

被引：13
|
作者：
SCHNEIDER, RP [1 ]
LI, DX [1 ]
WESSELS, BW [1 ]
机构：
[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 11期
关键词：
D O I：
10.1149/1.2096492
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：3490 / 3494
页数：5
相关论文
共 50 条
  • [21] Dielectric functions and electronic structure of InAsxP1-x films on InP
    Choi, S. G.
    Palmstrom, C. J.
    Kim, Y. D.
    Aspnes, D. E.
    Kim, H. J.
    Chang, Yia-Chung
    APPLIED PHYSICS LETTERS, 2007, 91 (04)
  • [22] Epitaxial growth of InAsxP1-x/InP quantum wells by HVPE
    Goumet, E
    Gil-Lafon, E
    Cadoret, R
    Castelluci, D
    Leymarie, J
    Vasson, AM
    Vasson, A
    Bideux, L
    Gruzza, B
    APPLIED SURFACE SCIENCE, 1999, 142 (1-4) : 637 - 641
  • [23] Determination of band offsets in strained InAsxP1-x/InP quantum well by capacitance voltage profile and photoluminescence spectroscopy
    Dixit, V. K.
    Singh, S. D.
    Porwal, S.
    Kumar, Ravi
    Ganguli, Tapas
    Srivastava, A. K.
    Oak, S. M.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (08)
  • [24] VAPOR GROWTH OF INASXP1-X
    MIZUNO, O
    ARAI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (12) : 1955 - 1958
  • [25] Growth and characterization of InAsxP1-x/InP strained multiple quantum wells by gas source molecular beam epitaxy
    Kuo, HC
    Thomas, S
    Curtis, AP
    Stillman, GE
    Lin, CH
    Chen, H
    INFRARED APPLICATIONS OF SEMICONDUCTORS - MATERIALS, PROCESSING AND DEVICES, 1997, 450 : 153 - 158
  • [26] High-field transport properties of InAsxP1-x/InP (0.3<=x<=1.0) modulation-doped heterostructures at 300 and 77 K
    1600, (72):
  • [27] Parametric modeling of the dielectric functions of InAsxP1-x alloy films on InP
    Byun, J. S.
    Kim, T. J.
    Hwang, S. Y.
    Kang, Y. R.
    Park, J. C.
    Kim, Y. D.
    THIN SOLID FILMS, 2014, 558 : 438 - 442
  • [28] INASXP1-X/INP PHOTODIODES PREPARED BY MOLECULAR-BEAM EPITAXY
    LEE, TP
    BURRUS, CA
    SESSA, WB
    TSANG, WT
    ELECTRONICS LETTERS, 1984, 20 (09) : 363 - 364
  • [29] OPTICAL-PROPERTIES OF INASP/INP AND INAS/INASP STRAINED-LAYER SUPERLATTICES AND HETEROSTRUCTURES
    SCHNEIDER, RP
    WESSELS, BW
    SUPERLATTICES AND MICROSTRUCTURES, 1989, 6 (03) : 287 - 292
  • [30] Photoexcited carrier diffusion dependence of differential reflection dynamics in InAsxP1-x/InP (x≤0.35) strained-multiple-quantum wells
    Zhao, YG
    Qin, YD
    Huang, XL
    Wang, JJ
    Zou, YH
    Masut, RA
    Beaudoin, M
    SOLID STATE COMMUNICATIONS, 1998, 105 (06) : 393 - 397
12345