PHONON DENSITY OF STATES OF AMORPHOUS SIXC1-X

被引：0
|
作者：
GUPTA, HC
REDDY, GS
TRIPATHI, BB
机构：
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1987年 / 48卷 / 03期
关键词：
D O I：
10.1016/0022-3697(87)90027-8
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：297 / 298
页数：2
相关论文
共 50 条
  • [31] 一种新的非晶钝化膜a—SixC1-x∶H膜
    张仿清
    王印月
    姜永波
    张亚非
    陈光华
    兰州大学学报, 1983, (03) : 61 - 65
  • [32] Structural, optical and electrical properties of silicon nanocrystals embedded in SixC1-x/SiC multilayer systems for photovoltaic applications
    Lopez-Vidrier, J.
    Hernandez, S.
    Sama, J.
    Canino, M.
    Allegrezza, M.
    Bellettato, M.
    Shukla, R.
    Schnabel, M.
    Loeper, P.
    Lopez-Conesa, L.
    Estrade, S.
    Peiro, F.
    Janz, S.
    Garrido, B.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2013, 178 (09): : 639 - 644
  • [33] Deposition and characterization of SixC1-x/Al2O3 coatings by magnetron sputtering for nuclear fusion applications
    Song, Binbin
    Wu, Ping
    Chen, Sen
    Khaskheli, Murad Ali
    Liang, Liang
    SURFACE & COATINGS TECHNOLOGY, 2011, 205 (17-18): : 4329 - 4334
  • [34] Nanoscale C-Rich SixC1-x Bus/Ring Waveguide Based Cross-Wavelength Data Converter
    Syu, Shih-Chang
    Cheng, Chih-Hsien
    Wang, Huai-Yung
    Chi, Yu-Chieh
    Lin, Gong-Ru
    ANNALEN DER PHYSIK, 2019, 531 (02)
  • [35] PHOTOEMISSION-STUDIES OF A-SIXC1-X-H/A-SI AND A-SIXC1-X-H/HYDROGENATED AMORPHOUS-SILICON HETEROJUNCTIONS
    EVANGELISTI, F
    FIORINI, P
    GIOVANNELLA, C
    PATELLA, F
    PERFETTI, P
    QUARESIMA, C
    CAPOZI, M
    APPLIED PHYSICS LETTERS, 1984, 44 (08) : 764 - 766
  • [36] MEASUREMENTS OF DENSITY OF LOCALIZED STATES IN a-SixC1-x: H FILMS USING THE FIELD EFFECT METHOD
    王印月
    张仿清
    郭华林
    陈光华
    Science Bulletin, 1985, (02) : 278 - 279
  • [37] CHEMICAL VAPOR INFILTRATION OF SIXC1-X FILMS FOR THE PREPARATION OF COMPOSITE-MATERIALS USING BOTH ORGANOSILICON AND HYDROCARBON PRECURSORS
    AGULLO, JM
    MAURY, F
    MORANCHO, R
    THIN SOLID FILMS, 1992, 209 (01) : 52 - 58
  • [38] Percolation mechanism through trapping/de-trapping process at defect states for resistive switching devices with structure of Ag/SixC1-x/p-Si
    Liu, Yanhong
    Gao, Ping
    Jiang, Xuening
    Li, La
    Zhang, Jialiang
    Peng, Wei
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (06)
  • [39] ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION OF SILICON-RICH AMORPHOUS SIXC1-X REFRACTORY LAYERS USING SIET4 AS A SINGLE SOURCE
    MAURY, F
    MESTARI, A
    MORANCHO, R
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1989, 109 : 69 - 75
  • [40] Chemical vapor co-deposition of C and SiC at moderate temperature for the synthesis of compositionally modulated SixC1-x ceramic layers
    Maury, F
    Agullo, JM
    SURFACE & COATINGS TECHNOLOGY, 1995, 76 (1-3): : 119 - 125
12345