RELATION BETWEEN LATTICE STRAIN AND ANOMALOUS OXYGEN PRECIPITATION IN A CZOCHRALSKI-GROWN SILICON

被引：7

作者：

KIMURA, S ^{[1
]}

ISHIKAWA, T ^{[1
]}

机构：

[1] UNIV TOKYO,ENGN RES INST,BUNKYO KU,TOKYO 113,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.359036

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spatial fluctuations of lattice strain in an as-grown Czochralski-grown silicon wafer, in which a ring-shaped region of densely distributed oxidation-induced stacking faults appears after oxidation thermal treatment, are measured by double-crystal reflection topography with synchrotron radiation. The measured lattice strain is isolated into local variations in lattice dilation and inclination angle from an average plane. The variation profile of the lattice spacing shows a small valley in the ring-shaped region, while showing a peak just outside the ring-shaped region. The relation between the lattice strain and anomalous oxygen precipitation is discussed. © 1995 American Institute of Physics.

引用

页码：528 / 532

页数：5

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