SCANNING TUNNELING MICROSCOPE INVESTIGATION OF SEMICONDUCTOR NANOMETER PARTICLES

被引：4

作者：

MIN, GW ^{[1
]}

YANG, XM ^{[1
]}

LU, ZH ^{[1
]}

YU, W ^{[1
]}

机构：

[1] SE UNIV,DEPT BIOMED ENGN,NANJING 210018,PEOPLES R CHINA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期

关键词：

D O I：

10.1116/1.587685

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two kinds of semiconductor nanometer particles, prepared by Langmuir-Blodgett techniques and the colloid method, were studied on highly oriented pyrolytic graphite using a scanning tunneling microscope operating in air. For PbS nanometer particles, striped structures of about 20-30 nm width were found. Further studies demonstrated that the striped structures are caused by tip-sample interactions and preparation processes. Tip-sample interactions can cause lateral motion and vertical transfer of the nanometer particles which are weakly adsorbed on graphite surface. But the preparation method and the properties of the nanometer materials are the decisive reasons for the ultimate structure formation.

引用

页码：1984 / 1987

页数：4

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