SEMICONDUCTOR NANOWHISKERS

被引：59
|
作者：
YAZAWA, M
KOGUCHI, M
MUTO, A
HIRUMA, K
机构：
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185
来源：
ADVANCED MATERIALS | 1993年 / 5卷 / 7-8期
关键词：
D O I：
10.1002/adma.19930050715
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Self-assembled nanostructures based on indium arsenide whiskers grown using molecular beam epitaxy and metal-organic vapor phase epitaxy (see Figure) could be of use as lead wires, connecting devices in integrated nanodevices. The procedure employed to produce these features in a controlled way is described, and the possibilities of developing nanowhisker heterojunctions discussed.
引用
收藏
页码：577 / 580
页数：4
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